The Silicon Photonics PDK
APSUNY Silicon Photonics Process Design Kit (PDK)
When companies use an Analog Photonics – SUNY Polytechnic Process Design Kit (PDK) under AIM Photonics, they not only have access to the most up-to-date silicon photonics PDK, but also get access to a community driving and enabling tomorrow’s silicon photonics design methodologies
Benefits of APSUNY Silicon Photonics PDK technologies
- Full active, passive, and interposer
- Extensive component library
- Support for simulation, layout, schematics, design rule checked (DRC) in multi-vendor EPDA software support
- O Band [1260 nm-1360 nm] support
- C+L Band [1500 nm-1600 nm] support
- 100 Gbps modulation and detection
- Push-pull analog and digital modulators for low chirp, long distance links
- Low loss passives, fiber-to-chip couplers
- Polarization diversity circuits (Low PDL)
Other helpful information to know
- Please use the current PDK v. 5.0a for all submissions or consult with MPW support
- The community of organizations who use our PDK is growing. To support this design work and provide information about common questions, we have set up help desk functions. Contact us for more details about getting an account.
Version 5.0a PDK Components
| Passive Components | Qty | Current Performance |
|---|---|---|
| Wave Guides | 6 | Silicon Strip <2.5dB/cm Silicon Low Loss <1dB/cm SiN <2.0dB/cm (>1550nm, L-Band) <1.0dB/cm (O-Band) |
| Edge Couplers | 4 | ~1.5dB/facet UHNA Fiber (TE-TM) PDL <0.5dB <3.0dB/facet SMF-28 Fiber (TE-Only) |
| Vertical Couplers | 2 | <3dB loss |
| 3dB 4-Port Splitters | 2 | loss ~0.5dB |
| 3dB Y-Junctions | 3 | loss ~0.2dB |
| Power Taps (1% & 10%) | 3 | loss ~<0.1dB |
| Layer Transitions | 3 | loss ~<0.1dB |
| Crossing | 1 | loss ~<0.2dB |
| Polarization Rotator | 1 | loss ~0.5dB |
| Polarization Splitter & Rotator | 1 | loss ~0.65dB, PDL <0..3dB |
| Waveguide Termination | 1 | Low reflection <-30dB |
| Active Components | Qty | Current Performance |
|---|---|---|
| C Band Photodetector | 1 | BW>45GHz, R~1A/W |
| C+L Band Photodetector | 1 | BW>35GHz, R~1.1A/W |
| O Band Photodetector | 1 | BW>40GHz, R~0.9A/W |
| C+L Band MZM | 2 | 25 and 50Gbaud (NRZ and PAM4) |
| O Band MZM | 1 | 25Gbaud (NRZ and PAM4) |
| MZM Termination | 1 | Impedance matched to MZMs |
| Microring Filters | 4 | ~26nm FSR (Fully reconfigurable) |
| Mircrodisk Switches | 4 | <3ns switch |
| Mircrodisk Modulators | 5 | 25Gbaud (NRZ and PAM4) |
| Analog Photodetector | 1 | SFDR >113dB/Hz 2/3* |
| Analog MZM | 1 | SFDR >100dB/Hz 2/3* |
| Thermo-Optic Phase Shifter | 2 | Pπ <25mW/π |
| Thermo-Optic Switch | 2 | Pπ <25mW/switch |
| Variable Optical Attenuator | 1 | up to 10dB |
*Based on reference transmitter and receiver
Interested in The Silicon Photonics Process Design Kit?
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